Semiconductor power device static parameter tester system & can test IGBT. Mosfet. Diode. BJT......

DCT2000 Semiconductor Power Device Static Parameter Tester System can test the static DC parameters of many electronic components (e.g. breakdown voltage V(BR)CES/V(BR)DSs, leakage current ICEs/lGEs/IGSs/lDSs, threshold voltage/VGE(th), turn-on voltage/VCE(on), transconductance/Gfe/Gfs, voltage drop/Vf, on-state resistance Rds(on)). Vf, on-state internal resistance Rds(on)).

The test types cover 7 categories and 26 sub-categories, including "diode", "transistor (e.g., BJT, MOSFET, IGBT)", "protection devices", "voltage regulator", "power supply", "power supply", and so on. ""Voltage regulator integration class""Relay class""Optocoupler class""Sensor monitoring class "

High-voltage power supply and power supply components

High voltage source standardized 1400V (optional 2KV), high current source standardized 100A (optional 40A,200A,500A)

Control pole / gate voltage 40V, gate current 10mA

Resolution up to 1mV / 1nA, accuracy up to 0.5%

DCT2000 semiconductor power device Static parameter tester system for power device testing can also test the "junction capacitance", support "pulse-type one-touch heating" and "sorter connection"

Part 1 Specifications & Environment

1.1, Product Information

Model No.: DCT2000

Product Name: Semiconductor Power Device Static Parameter Tester System

1.2, Physical Specifications

Mainframe Dimensions: Depth 660*Width 430*Height 210(mm)

Mainframe Weight: <35kg

Mainframe weight: <1.5kg

1.3 Electrical Environment

Power Consumption of Main Unit: <300W

Altitude: Altitude not exceeding 4000m;

Environmental Requirements: -20℃~60℃ (Storage), 5℃~50℃ (Work);

Relative Humidity: 20%RH~75%RH (No condensation, wet bulb thermometer temperature 45℃ or below);

Atmospheric pressure: 86Kpa~106Kpa;

Protective conditions: no large dust, corrosive or explosive gases, conductive dust, etc.;

Grid requirements: AC220V, ±10%, 50Hz±1Hz;

Working time: continuous;

Part II: Application Scenarios and Product Features

I. Application Scenarios

1, test analysis (power device R & D design stage of the initial test, the main function of the curve tracker)

2, failure analysis (test and analysis of failed devices to find the failure mechanism. In order to facilitate the overall design of the electronic machine and the use of the process to improve the program)

3, selection and matching (in the device before welding to the circuit board to carry out all the tests, the test data will be more consistent with the classification of the device matching)

4, incoming inspection (research institutes and electronic factories of the Department of Quality (IQC) on the incoming device sampling/full inspection, to control the device's yield)

5, quantity inspection (the main function is to track the curve)

6, the power device development and design stage initial tests, the main function is to track the curve of the instrument. p>

5, mass production test (can be connected to the robot, sweeping gun, sorting machine and other types of auxiliary machinery and equipment, to achieve scale, automated testing)

6, to replace the imported (DCT2000 semiconductor power device static parameter tester system can be used to replace the same level of imported products)

Second, the product features

1, programmable high-voltage source of 10 ~ 1400V, to provide 2000V option. 1400V, providing 2000V options;

2, program-controlled high-current source 1uA ~ 100A, providing 40A, 200A, 500A options;

3, drive voltage 10mV ~ 40V

4, the control pole current of 10uA ~ 10mA;

5, 16-bit ADC, 100K / S sampling rate;

6, 16-bit ADC, 100K / S sampling rate;

6, the static parameters of semiconductor power device tester system to replace the level of imports.

6, automatic identification of device polarity NPN / PNP

7, curve tracer, four-wire Kelvin connection to ensure the accuracy of the loading measurement

8, through the RS232 interface to connect to the calibration of the digital meter, the system for calibration

9, the different package forms to provide the corresponding fixtures and adapters (such as TO220, SOP-8, DIP, SOT-23, etc.)

10, semiconductor power device static parameter tester system can measure a lot of electronic components (such as diodes, transistors, MOSFETs, IGBTs, SCRs, opto-couplers, relays, etc.);

11, semiconductor power device static parameter tester system to achieve the curve tracking instrument (such as breakdown voltage V (BR)) CES/V(BR)DSs, leakage current ICEs/lGEs/IGSs/lDSs, threshold voltage/VGE(th), turn-on voltage/VCE(on), transconductance/Gfe/Gfs, voltage drop/Vf, on-resistance Rds(on) )

12, junction capacitance parameters can also be tested, such as Cka, Ciss, Crss. Coss;

13, pulse current automatic heating function, convenient for high-temperature testing, without the need for external heating device;

14, Prober interface, Handler interface optional (16Bin), connected to the sorting machine the highest efficiency of 1h/9,000;

15, semiconductor power device static parameter testers system in the major electronics factory IQC, laboratory has a wide range of applications;

Part III: Product Introduction

3.1, Product Introduction

DCT2000 semiconductor power device static parameter tester system is a combination of semiconductor power device static parameter tester system of many years of experience by the technical team of the company, as well as many domestic and foreign test system products familiar with the understanding, completely independent development and design of the new generation of Completely independent development and design of a new generation of "semiconductor power device static parameter tester system". The software and hardware are all independently completed by the team. This determines that the functionality and reliability of this product can be continuously improved and upgraded.

Semiconductor power device static parameter tester system pulse signal source output, high-voltage source standard with 1400V (optional 2KV), high-current source standard with 100A (optional 40A, 200A, 500A) gate voltage of 40V, gate current of 10mA, the resolution of the highest to 1mV / 30pA, the accuracy of the highest to 0.5%. Program control software is based on Lab VIEW platform, filled menu interface. The test socket with Kelvin induction structure automatically compensates for any voltage drop caused by the system and the length of the test cable, ensuring accurate and reliable test results. The product can test Si, SiC, GaN material IGBTs, DIODEs, MOSFETs, BJTs, SCRs and other 7 categories and 26 classifications of electronic components. It covers almost all common devices in electronic products. Both voltage and current sources and functional configurations are highly scalable.

Products for desktop placement of desktop structure, by the test host and programmable computer two major components. External various types of fixtures and adapters, but also through the Prober interface, Handler interface optional (16Bin) connected to the sorting machine and robot to establish a workstation, to achieve rapid batch testing. Through the software settings can be automatically categorized according to the parameter level of the device under test for storage. It can cope with different scenarios such as "incoming material inspection", "failure analysis", "selection and matching" and "mass production test". The new system is designed for different scenarios such as "incoming inspection", "failure analysis", "selection and matching" and "mass production test".

Semiconductor power device static parameter tester system product reliability and test data repeatability and test efficiency have excellent performance. The innovative "point-control fixture" allows the operator to realize one-point measurement on the fixture. Operation is simpler and more efficient. Test data can be saved as EXCEL text, convenient and fast completion of the curve tracker.

3.2, the human-machine interface (DCT2000 semiconductor power device static parameter tester system)

Part IV: Functional Configuration

4.1, Configuration Options

DCT2000 semiconductor power device static parameter tester system is configured as follows

4.2, Adapter Selection

The adapters of DCT2000 semiconductor power device static parameter tester system are as follows

4.3, Test Types and Parameters

The test types and parameters of DCT2000 semiconductor power device static parameter tester system are as follows

(1) Diode class: Diode ?Diode

Kelvin. Vrrm, Irrm, Vf, △Vf, △Vrrm, Cka, Tr (optional);

(2) Diode class: voltage regulator diode ?ZD (Zener Diode)

Kelvin, Vz, lr, Vf, △Vf, △Vz, Roz, lzm, Cka;

(3) Diode class: voltage regulator diodes ? ZD (Zener Diode)

Kelvin, Vz, lr, Vf, △Vf, △Vz, Roz, lzm, Cka;

(4) Diode class: three-terminal SchottkyBarrierDiode (SBD)

Kelvin , Type_ ident , Pin_test , Pin_test , Pin_test , Pin_test , Pin_test , Pin_test ident, Pin_test, Vrrm, Irrm, Vf, △Vf, V_Vrrm, I_Irrm, △Vrrm, Cka, Tr (optional);

(5) Diodes: Transient Diodes TVS

Kelvin, Vrrm, Irrm, Vf, △Vf, △Vrrm, Cka;

(6) Diodes: Transient Diodes TVS

Kelvin, Vrrm, Irrm, Vf, △Vf, △Vrrm, Cka;

(6) Diode Class: Rectifier Bridge Stack

Kelvin , Vrrm , Irrm , Ir_ac, Vf, △Vf, △Vrrm , Cka ;

(7) Diode Class: Three-Phase Rectifier Bridge Stack

Kelvin , Vrrm , Irrm , Ir_ac, Vf, △Vf, △Vrrm , Cka;

(8) transistor class: transistor

Kelvin, Type_ident, Pin_chk, V(br)cbo, V(br)ceo, V(br)ebo, Icbo, lceo, Iebo, Hfe, Vce(sat), Vbe(sat), △Vsat, △Bvceo, △Bvsat, △Vsat. Bvceo, △Bvcbo, Vbe, lcm, Vsd, Ccbo, Cces, Heater, Tr (optional), Ts (optional), Value_process;

(9)? Triode Category: Bi-directional Thyristor

Kelvin, Type_ident, Qs_chk, Pin_test, Igt, Vgt, Vtm, Vdrm, Vrrm, Vdrm rrm, Irrm, Idrm, Irrm_drm, Ih, IL, C_vtm, △Vdrm, △Vrrm, △Vtm;< /p>

(9)?

(10) Triode Category: Unidirectional SCR

Kelvin, Type_ident, Qs_chk, Pin test, lgt, Vgt, Vtm, Vdrm Vrrm, IH, IL, △Vdrm△Vrrm, Vtm;

(11) Triode Category: MOSFET

Kelvin , Type_ident, Pin_test, VGS(th), V(BR)Dss, Rds(on), Bvds_rz, △Bvds, Gfs, Igss, ldss, Idss zero, Vds(on), Vsd, Ciss, Coss, Crss, Bvgs, ld_lim , Heater, Value_proces, △Rds(on);

(12) Triode class: double MOSFET

Kelvin, Pin_chk, Ic_fx_chk, Type_ident, Vgs1(th), VGs2(th), VBR)Dss1, VBR)Dss2 , Rds1(on), Rds2(on), Bvds1 rz, Bvds2_rz, Gfs1, Gfs2, lgss1, lgss2, Idss1, Idss2, Vsd1, Vsd2, Ciss, Coss, Crss;

(13) Triode class: JFET

Kelvin, VGS(off ), V(BR)Dss, Rds(on), Bvds_rz, Gfs, lgss, Idss(off), Idss(on), vds(on), Vsd, Ciss, Crss, Coss;

(14) Triode class: IGBT

Kelvin, VGE(th) , V(BR)CES, Vce(on), Gfe, lges, lces, Vf, Ciss, Coss, Crss;

(15) Triode class: three-terminal switching power driver

Kelvin, Vbb(AZ), Von(CL), Rson, Ibb(off), Il(lim), Coss, Fun_pin_volt;

(16) Triode class: seven-terminal half-bridge driver

Kelvin, lvs(off), lvs(on), Rson_h, Rson_l, lin, Inh, ls_Volt, Sr_volt;

(17) Triode class: high side power switch

Kelvin, Vbb(AZ), Von(CL), Rson, Ibb(off), ll(Iim), Coss, Fun_pin_volt;

(18) Protection class: varistor

Kelvin, Vrrm, Vdrm, Irrm, Idrm, Cka △Vr ;

(19) Protection class: single-group voltage protector

Kelvin , Vrrm, Vdrm, Irrm, Idrm, Cka, △Vr;

(20) Protection class: double-group voltage protector

Kelvin, Vrrm, Vdrm, Irrm, Idrm, Cka, △Vr;

(21) Protection class: single-group voltage protector

Kelvin, Vdrm, Vdrm, Idrm, Cka, △Vr Vr;

(21) Voltage regulator integration category: three-terminal regulator

Kelvin , Type_ident , Treg_ix_chk , Vout , Reg_Line, Reg_Load, IB, IB_I, Roz, △IB, VD, ISC, Max_lo, Ro, Ext _Sw, Ic_fx _chk;

(22) Voltage regulator integration class: reference IC (TL431)

Kelvin, Vref, △Vref, lref, Imin, loff, Zka, Vka;

(23) Voltage regulator integration class: four-terminal regulator

Kelvin, Type_ident, Treg_ix_chk, Vout, Reg_Line, Reg_Load, IB, IB_I, Roz, △lB, VD, Isc, Max_lo, Ro, Ext_Sw, Ic_fx_chk;

(24) Voltage regulator integration class: switching regulator integrator

Optional;

(25) Relay category: 4-pin single-knife single-group, 5-pin single-knife double-group, 8-pin double-group double-knife, 8-pin double-group four-knife, solid-state relays

Kelvin, Pin_chk, Dip6_type_ident, Vf, Ir, Vl, Il, Ift, Ron, Ton (optional), Toff (optional);

(26) optocoupler category: 4 pin photocoupler, 6-pin photocoupler, 8-pin photocoupler, 16-pin photocoupler

Kelvin, Pin_chk, Vf, Ir, Bvceo, Bveco, Iceo, Ctr, Vce(sat), Tr, Tf;

(27)Sensing and monitoring category:

Current sensor (ACS712XX series, CSNR_15XX series) (Optional) 15XX series) (optional);

Hall devices (MT44XX series, A12XX series) (optional);

Voltage monitor (optional);

Voltage reset IC (optional);

Curve tracer

Part V: Performance Indicators

DCT2000 Semiconductor Power Device Static parameter tester system performance indicators are as follows

5. 1, current / voltage source (VIS) comes with VI measurement unit

(1) voltage (FV)

range ± 40V resolution 19.5mV accuracy ± 1% set value ± 10mV

range ± 20V resolution 10mV accuracy ± 1% set value ± 5mV

range ± 20V resolution 10mV accuracy ± 1% set value

range ± 20V resolution 10mV accuracy ± 1% set value ± 5mV <

Range ±10V resolution 5mV accuracy ±1% Set value ±3mV

Range ±5V resolution 2mV accuracy ±1% Set value ±2mV

Range ±2V resolution 1mV accuracy ±1% Set value ±2mV

(2) Addition of current (FI)

Range ±40A resolution 19.5mA accuracy ±2% Set value ±20mV

Range ±40A resolution 19.5mA accuracy ±2% Set value ±20mV

(3) FI

(4) FI

(4) FI

Range ±40A resolution 19.5mA accuracy ±2 ±2% Set value ±20mA

Range ±4A Resolution 1.95mA Accuracy ±1% Set value ±2mA

Range ±400mA Resolution 1195uA Accuracy ±1% Set value ±200uA

Range ±40mA Resolution 119.5uA Accuracy ±1% Set value ±20uA

Range ±4mA Resolution 195nA Accuracy ±1% Set value ±20uA

Range ±4mA Resolution 195nA Accuracy ±1% Set value ±20uA

Range ±4mA Resolution 195nA Accuracy ±1% Set value ±20uA

Range ±4mA Resolution 195nA Accuracy ±1% Set value ±20uA 4mA resolution 195nA precision ±1% set value ±200nA

Range ±400uA resolution 19.5nA precision ±1% set value ±20nA

Range ±40uA resolution 1.95nA precision ±1% set value ±2nA

Description: current greater than 1.5A automatically converted to pulse output, pulse width range: 300us-1000us. 300us-1000us adjustable

(3) Current Measurement (MI)

Range ± 40A resolution 1.22mA precision ± 1% reading value ± 20mA

Range ± 4A resolution 122uA precision ± 0.5% reading value ± 2mA

Range ± 400mA resolution 12.2uA precision ± 0.5% reading value ± 200mA

Range ± 400mA resolution 12.2uA precision ± 0.5% reading value ± 2mA

Range ± 400mA resolution 12.2uA precision ± 0.5% reading value ± 200mA 0.5% accuracy ±200uA

Range ±40mA resolution 1.22uA ±0.5% accuracy ±20uA

Range ±4mA resolution 122nA ±0.5% accuracy ±2uA

Range ±400uA resolution 12.2nA ±0.5% accuracy ±200nA

Range ±40mA resolution 12.2nA ±0.5% accuracy ±200nA

Range ±40mA resolution 12.2nA ±0.5% accuracy ±200nA

Range ±400mA resolution 12.2nA ±0.5% accuracy ±200nA

Range ± 5V resolution 1.22uV accuracy ± 0.5% reading value ± 20uV

5.2, data acquisition part (VM)

16-bit ADC, 100K / S sampling rate

(1) voltage measurement (MV)

Range ± 2000V resolution 30.5mV precision ± 0.5% reading value ± 200mV

Range ± 1000V resolution 15.3mV precision ± 0.2% reading value ± 20mV

Range ± 100V resolution 1.53mV precision ± 0.1% reading value ± 10mV

Range ± 10V resolution 153uV precision ±0.1% reading value ±5mV

Range ±1V resolution 15.3uV precision ±0.1% reading value ±2mV

Range ±0.1V resolution 1.53uV precision ±0.2% reading value ±2mV

(2) Leakage Current Measurement (MI)

Range ±100mA resolution 30uA precision ± 0.2% of the reading value ± 100uA

Range ± 10mA resolution 3uA precision ± 0.1% of the reading value ± 3uA

Range ± 1mA resolution 300nA precision ± 0.1% of the reading value ± 300nA

Range ± 100uA resolution 30nA precision ± 0.1% of the reading value ± 100nA

(2) Leakage Current Measurement (MI)

Range ± 100mA resolution 30nA precision ± 0.1% of the reading value ± 100nA

(2) Leakage Current Measurement (MI)

(2) Leakage current measurement (MI)

Range ±10uA resolution 3nA accuracy ±0.1% reading ±20nA

Range ±1uA resolution 300pA accuracy ±0.5% reading ±5nA

Range ±100nA resolution 30pA accuracy ±0.5% reading ±0.5nA

(3) Capacitance capacity measurement (MC)

Range 6nF Resolution 10PF Accuracy ±5% Reading Value ±50PF

Range 60nF Resolution 100PF Accuracy ±5% Reading Value ±100PF

5. 3. High Voltage Source (HVS) (Basic) 12-bit DAC

(1) Pressurization (FV)

Range 2000V/10mA Resolution 30.5mV precision ±0.5% setpoint ±500mV

Range 200V/10mA resolution 30.5mV precision ±0.2% setpoint ±50mV

Range 40V/50mA resolution 30.5mV precision ±0.1% setpoint ±5mV

(2) add current (FI):

Range 10mA resolution 3.81uA accuracy ± 0.5% set value ± 10uA

Range 2mA resolution 381nA accuracy ± 0.5% set value ± 2uA

Range 200uA resolution 38.1nA accuracy ± 0.5% set value ± 200nA

Range 20uA resolution 3.81nA accuracy ± 0.5% set value ± 5mV 0.5% precision ±20nA

Range 2uA resolution 381pA ±0.5% precision ±20nA

DCT2000 Semiconductor Power Devices Static Parameter Tester can measure many electronic components (such as diodes, transistors, MOSFETs, IGBTs, SCRs, opto-couplers, relays and so on). Institutes and universities, packaging and testing factories, electronic factories .....