Sputtering targets are mainly used in the electronics and information industry, such as integrated circuits, information storage, liquid crystal display, laser memory, electronic control devices, etc.; they can also be used in the field of glass coating; they can also be used in the abrasion-resistant materials, high-temperature corrosion-resistant, high-grade decorative products and other industries.
Classification According to the shape of the target can be divided into long target, square target, round target, shaped target According to the composition can be divided into metal targets, alloy targets, ceramic compounds target According to the application of the different ceramic targets are divided into semiconductor associated with ceramic targets, recording medium ceramic targets, display ceramic targets, superconducting ceramic targets and giant magnetoresistor ceramic targets According to the field of application is divided into microelectronic targets, magnetic recording targets, optical disk targets, Precious metal targets, thin film resistive targets, conductive film targets, surface modification targets, photomask layer targets, decorative layer targets, electrode targets, encapsulation targets, and other targets Magnetron sputtering principle: sputtering target pole (cathode) and anode with an orthogonal magnetic and electric fields, in a high vacuum chamber filled with inert gases (usually Ar gas), permanent magnets in the target material to form the surface of the magnetic field of 250 to 350 gauss, with high-voltage magnetic field. Gauss magnetic field on the surface of the target material, with the high-voltage electric field composed of orthogonal electromagnetic field. Under the action of the electric field, Ar gas ionization into positive ions and electrons, target plus a certain amount of negative high pressure, the electrons from the target pole by the action of the magnetic field and the ionization of the working gas chances of increasing in the cathode near the formation of high-density plasma, Ar ions accelerated under the action of the Lorentz force to fly to the target surface, with a high speed bombardment of the surface of the target, so that the target sputtering out of the atoms to follow the principle of momentum transfer to a high level of kinetic energy from the target surface to fly to the base. The atoms sputtered on the target follow the principle of momentum conversion and fly away from the target surface with high kinetic energy to the substrate to precipitate into a film. Magnetron sputtering is generally divided into two types: tributary sputtering and radio frequency sputtering, of which the principle of tributary sputtering equipment is simple, and when sputtering metal, its rate is also fast. The use of radio frequency sputtering is more extensive, in addition to sputtering of conductive materials, but also sputtering of non-conductive materials, but also the Division for the preparation of reactive sputtering of oxides, nitrides and carbides and other compound materials. If the frequency of the radio frequency is increased to become microwave plasma sputtering, commonly used electron cyclotron *** vibration (ECR) type microwave plasma sputtering.
Magnetron sputtering target:
Metal sputtering target, alloy sputtering target, ceramic sputtering target, boride ceramic sputtering target, carbide ceramic sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering target, oxide ceramic target, selenium ceramic sputtering target, silicon ceramic sputtering target, sulfide ceramic sputtering target, tellurium ceramic sputtering targets, other ceramic targets, chromium-doped silicon oxide ceramic targets (Cr-SiO), indium phosphide targets (InP), lead arsenide targets (PbAs), indium arsenide targets (InAs).
High-purity high-density sputtering targets:
Sputtering targets (purity: 99.9%-99.999%)
1. Metal targets:
Nickel target, Ni, titanium target, Ti, zinc target, Zn, chromium target, Cr, magnesium target, Mg, niobium target, Nb, Sn, aluminum target, Al, indium target, In, iron target, Fe, ZrAl target, ZrAl, titanium aluminum target, TiAl, zirconium target, Zr, aluminum silicon target, AlSi, silicon target, Si, copper target Cu, tantalum target T, a, germanium target, Ge, silver target, Ag, cobalt target, Co, gold target, Au, gadolinium target, Gd, lanthanum target, La, yttrium target, Y, cerium target, Ce, tungsten target, w, stainless steel target, nickel-chromium target, NiCr, hafnium target, Hf, molybdenum target, Mo, FeNi target, FeNi, tungsten target, W and other metal sputtering targets.
2. Ceramic targets
ITO target, AZO target, magnesium oxide target, iron oxide target, silicon nitride target, silicon carbide target, titanium nitride target, chromium oxide target, zinc oxide target, zinc sulfide target, silicon dioxide target, silicon oxide target, cerium oxide target, zirconium dioxide target, niobium pentaoxide target, titanium dioxide target, zirconium dioxide target, hafnium dioxide target, titanium dioxide target, zirconium dioxide target, tungsten trioxide target, tungsten oxide target, tungsten oxide target, tungsten oxide target, tungsten oxide target, tungsten target, tungsten target, tungsten target, zirconium dioxide target.
3. Alloy targets
Nickel-chromium alloy targets, nickel-vanadium alloy targets, aluminum-silicon alloy targets, nickel-copper alloy targets, titanium-aluminum alloys, nickel-vanadium alloy targets, boron-iron alloy targets, ferrosilicon alloy targets, and other high-purity alloy sputtering targets.