1. linear saturation fault: when the transistor is working, the resistance is too small and the current is too large, which can not amplify the electrical signal normally, resulting in distortion of the output waveform or too small direct output voltage.
2. Open circuit fault: a contact port of the transistor is damaged, or the wire falls off, thus preventing the current from flowing through the transistor.
3. Short-circuit fault: the transistor crosses two contact ports due to too large or too small voltage, so the current cannot flow or directly burn the transistor.
4. Penetration fault: the fault is located on the surface of the transistor or inside the material. In which surface failure may be caused by external factors (volume failure). Volume failure may be a defect in production or physical damage caused by high temperature and radiation.
5. Base leakage or collector leakage: improper internal structure, materials or use conditions of transistors lead to common leakage of transistors.
Transistor is one of the most basic electronic devices in modern electronics and computer science. They can adjust the current and amplify the signal. However, due to factors such as process manufacturing and use environment, the transistor may fail, thus affecting the normal work of the whole electronic equipment. In order to better maintain high-performance electronic systems, it is necessary to accurately detect and eliminate faults. Therefore, the transistor level fault model came into being.
The existence of these failure modes is related to the failure phenomena in daily use or maintenance, which need to be solved by efficient testing and elimination. Therefore, in the application and development of transistor technology, transistor-level fault model is widely used in testing, debugging and reliability evaluation, which can ensure the efficient and stable operation of electronic equipment.