1. Specialty gases (Specialty gases): refers to those in specific areas of application, the gas has special requirements of pure gas, high purity gas or high purity of single gas prepared by the monomolecular gas binary or polymorphic mixture of gas. Specialty gases in a wide range of categories, usually can be distinguished as electronic gases, standard gas, environmental protection gas, medical gas, welding gas, sterilization gas, etc., widely used in electronics, electric power, petrochemical, mining, iron and steel, non-ferrous metal smelting, thermal engineering, biochemical, environmental monitoring, medical research and diagnostics, food preservation and other fields.
2. Standard gases: Standard gases are standard substances. Standard substances are highly uniform, stable and accurate measurement standards, they have the basic role of reproducing, preserving and transmitting quantitative values, and are used to calibrate measuring instruments and measurement processes in the fields of physics, chemistry, biology and engineering measurements, to evaluate the accuracy of measurement methods and testing laboratories, to determine the characteristics of the material or product values, and to carry out value arbitration, etc. Large ethylene plants, ammonia synthesis plants, and the use of standard gases in the field of chemical industry. Large-scale ethylene plants, ammonia plants and other petrochemical enterprises, in the process of plant startup, stopping and normal production need dozens of pure gas and hundreds of multi-component standard gas mixtures, which are used to calibrate, calibrate online analytical instruments used in the production process and analyze the raw materials and product quality of the instruments. Standard gases are also used for environmental monitoring, toxic organic measurements, automotive emission testing, natural gas BTU measurements, liquefied petroleum gas (LPG) calibration standards, and supercritical fluid processes. Standard gases are divided into binary, ternary and multivariate standard gases depending on the number of gas components; gas distribution accuracy requirements are characterized by gas distribution tolerance and analytical tolerance; SE2M I gas distribution tolerance standards are more common, but each company has its own corporate standards. The minimum concentration of components is 10- 6 levels, and the number of components can be up to more than 20 kinds. Preparation method can be used weight method, and then use chromatographic analysis to verify, but also according to the standard transfer procedure for transmission.
3, electronic gases (Elect ron ic gases): semiconductor industry gases are collectively referred to as electronic gases. According to its category can be divided into pure gas, high purity 4 _6 m + p- _4 gas and semiconductor special material gas three categories. Special material gases are mainly used for epitaxy, doping and etching processes; high-purity gases are mainly used as dilution gas and carrier gas. Electronic gases are an important branch of special gases. Electronic gases according to the purity level and the use of occasions, can be divided into electronic level, L S I (large-scale integrated circuits) level, VL S I (ultra-large-scale integrated circuits) level and UL S I (ultra-large-scale integrated circuits) level.
4. Epitaxial gases: The gases used to grow one or more layers of material on a carefully selected substrate by chemical vapor deposition (CVD) are called epitaxial gases. There are four types of silicon epitaxial gases, namely silane, dichlorodihydrosilane, silicon trichloride, and silicon tetrachloride, which are mainly used for epitaxial silicon deposition, polycrystalline silicon deposition, deposition of silicon oxide films, deposition of silicon nitride films, and amorphous silicon film deposition for solar cells and other photoreceptors. Epitaxial growth is a process in which a single crystal material is deposited and grown on a substrate surface. This epitaxial layer often has a different resistivity than the substrate.
5. Etch gases (Etch ing gases): Etching is the substrate without photoresist masking processing surfaces such as silicon oxide film, metal film, etc. etc. etc., so that there is a photoresist masked area is preserved, so that the surface of the substrate to get the desired imaging pattern. The basic requirements of etching is, graphic edge neat, clear lines, graphic transformation difference is small, and the photoresist film and its mask to protect the surface without damage and drilling. Etching methods are wet chemical etching and dry chemical etching. Dry etching gas called etching gas, usually fluoride gas, such as carbon tetrafluoride, nitrogen trifluoride, hexafluoroethane, perfluoropropane, trifluoromethane and so on. Dry etching due to etching direction, process control, precise, convenient, no degumming phenomenon, no substrate damage and contamination, so
The scope of its application is becoming more and more extensive.
1. Specialty gases (Specialty gases): refers to those in specific areas of application, the gas has special requirements of pure gas, high purity gas, or by the high purity of the monomaterial gas formulated by the binary or polymorphic mixture of gas. Specialty gases in a wide range of categories, usually can be distinguished as electronic gases, standard gas, environmental protection gas, medical gas, welding gas, sterilization gas, etc., widely used in electronics, electric power, petrochemicals, mining, iron and steel, non-ferrous metal smelting, thermal engineering, biochemistry, environmental monitoring, medical research and diagnosis, food preservation and other fields.
2, Standard gases (Standard gases): standard gases belong to the standard substance. Standard substances are highly homogeneous, stable and accurate measurement standards, they have the basic role of reproducing, preserving and transferring values, in the field of physics, chemistry, biology and engineering measurements for calibration. They are used in the field of physical, chemical, biological and engineering measurements to calibrate measuring instruments and measurement processes, to evaluate the accuracy of measurement methods and the testing capabilities of testing laboratories, to determine the characteristic values of materials or products, and to arbitrate measurement values. Large ethylene plant, ammonia plant and other petrochemical enterprises, in the device startup, stop and normal production process requires dozens of pure gas and several + hundreds of multi-component standard mixture, used to calibrate, calibrate the production process of on-line analytical instruments and analyze raw materials and product quality of the instrument. Standard gases are also used for environmental monitoring, toxic organic measurements, automotive emission testing, natural gas BTU measurements, LPG calibration standards, supercritical fluid processes, etc. Standard gases are divided into binary, ternary and multivariate standard gases depending on the number of gas components; gas distribution accuracy requirements are characterized by gas distribution tolerance and analytical tolerance; SE2M I gas distribution tolerance standards are more common, but each company has its own corporate standards. The minimum concentration of components for the 10- 6 level, the number of components can be up to more than 20 kinds of preparation method can be used by weight method, and then use the chromatographic analysis to verify, but also in accordance with the standard delivery program for delivery.
3, electronic gases (Elect ron ic gases): semiconductor industry gases are collectively referred to as electronic gases. According to its category can be divided into pure gas, high purity gas and semiconductor special material gas three categories. Special material gases are mainly used for epitaxy, doping and etching process; high-purity gases are mainly used as dilution gas and carrier gas. Electronic gases are an important branch of special gases. Electronic gases according to the purity level and the use of occasions, can be divided into electronic level, L S I (large-scale integrated circuits) level, VL S I (ultra-large-scale integrated circuits) level and UL S I (ultra-large-scale integrated circuits) level.
4. Epitaxial gases: The gases used to grow one or more layers of material on a carefully selected substrate by chemical vapor deposition (CVD) are called epitaxial gases. There are four types of silicon epitaxial gases, namely silane, dichlorodihydrosilane, silicon trichloride, and silicon tetrachloride, which are mainly used for epitaxial silicon deposition, polycrystalline silicon deposition, deposition of silicon oxide membranes, deposition of silicon nitride membranes, and amorphous silicon membrane deposition for solar cells and other photoreceptors. Epitaxial growth is a process in which single-crystal materials are deposited and grown on the surface of a substrate. The resistivity of this epitaxial layer is often different from that of the substrate.
5. Etching gases (Etch ing gases): Etching is the substrate without photoresist masking processing surface such as silicon oxide film, metal film etc. etc. etc., and make the photoresist masking area is preserved, so that the substrate surface to get the required imaging pattern. The basic requirements of etching is, graphic edge neat, clear lines, graphic transformation difference is small, and the photoresist film and its mask to protect the surface without damage and drilling. Etching methods are wet chemical etching and dry chemical etching. Dry etching gas called etching gas, usually fluoride gas, such as carbon tetrafluoride, nitrogen trifluoride, hexafluoroethane, perfluoropropane, trifluoromethane and so on. Dry etching due to etching direction, process control, precise, convenient, no degumming phenomenon, no substrate damage and contamination, so its application is becoming more and more widespread.
6. Dopant Gases (Dopant Gases): In the manufacture of semiconductor devices and integrated circuits, a certain impurity or some impurities doped into the semiconductor material, in order to make the material with the required type of conductivity and a certain resistivity, used to manufacture PN junctions, resistors, buried layers and so on. Doping process used in the gas doping source is known as the dopant gas. Mainly includes arsenane, phosphane, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride, boron trichloride and ethylborane. Usually dopant source and carrier gases (such as argon and nitrogen) in the source cabinet mixing, mixed gas flow continuously into the diffusion furnace around the wafer, the compound dopant deposited on the surface of the wafer, and then reacted with the silicon to generate dopant metal and migrate into the silicon.
7. Fumigation gas (Sterilizing Gases): the gas has a bactericidal effect called fumigation gas. Commonly used gas varieties are ethylene oxide, phosphine, bromomethane, bromoformaldehyde, propylene oxide and so on. The principle of sterilization is the use of alkylation, so that the microbial tissue indispensable to maintain life inert material. The most commonly used is a mixture of ethylene oxide and carbon dioxide in various proportions, with the content of ethylene oxide being 10, 20, or 30%, depending on the application. Mixtures of ethylene oxide and freon12, ethylene oxide with freon11 and freon12 can also be used. The sterilization effect depends on the concentration of each component, temperature, humidity, time and pressure. Fumigation gas can be used for sanitary materials, medical equipment, cosmetic raw materials, animal feed, food, paper bills, spicy
8. Welding shield gas (Welding Gases): gas welding due to the welding quality, high efficiency, easy to realize the advantages of automation and other advantages to the rapid development. Welding shielding gas can be a unit of gas, there are binary, ternary gas mixture. The purpose of using welding shielding gas is to improve the quality of the weld, reduce the width of the weld heating band, to avoid material oxidation. Unit gas has argon, carbon dioxide, binary mixture of argon and oxygen, argon and carbon dioxide, argon and helium, argon and hydrogen mixture. Ternary gas mixture of helium, argon, carbon dioxide mixture. Depending on the application of different welding consumables to choose different ratios of welding gas mixture.
9. Gases for Ion Implantation (Gases for Ion Implantation): Ion implantation is the ionization of impurities, such as P +, B +, As + accelerated to a high energy state, and then injected into the intended substrate. Ion implantation is most widely used for controlling V th (threshold voltage). The amount of impurity injected can be determined by measuring the ion beam current. The gases used in the ion implantation process are called ion implantation gases, and there are phosphorus, boron, and arsenic gases.
10. non-liquefied gases (Nonliquefied Gases): compressed gases based on a certain pressure and temperature in the physical state of the cylinder and the boiling point range can be distinguished into two categories, that is, liquefied gases and non-liquefied gases. Non-liquefied gases are gases that are completely gaseous at 2111 °C and at tank pressure, except for gases dissolved in solution. It can also be defined as a gas that does not liquefy at normal ground temperatures and pressures of 13,789 to 17,237 kPa.
11. Liquefied Gases: Gases that are partially liquefied at 2111 °C and tank pressure. Or defined as gases liquefied in cylinders at normal temperatures and pressures of 172142 to 17237kPa. Compressed Gases (Compressed Gases) Compressed gases are defined as any gas or mixture of gases with an absolute pressure in a cylinder exceeding 27518 kPa at 2111 °C; or any gas or mixture of gases with an absolute pressure exceeding 717 kPa at 5414 °C, independent of the pressure at 2111 °C; or any liquid with an absolute pressure of gases exceeding 27518 kPa at 3718 °C. Any liquid.
12. Rare Gases: Any of the six noble gases in the last group of the periodic table, i.e. helium, neon, argon, krypton, xenon and radon. The first five gases can be extracted from the air separation method.
13. low-pressure liquefied gases (Low P ressu re L iquef ied Gases): critical temperature greater than 70 ℃ gas. Distinguish between non-combustible and non-toxic and non-combustible toxic, acidic corrosive gases; combustible and non-toxic and combustible toxic, acidic corrosive gases; easy to decompose or polymerization of combustible gases. Such gases are liquid when filled as well as during storage, transportation and use at the permitted working temperature. Including the gas species are monofluorodichloromethane, difluorochloromethane, difluorodichloromethane, difluorobromochloromethane, trifluoroethylene chloride, tetrafluoroethylene chloride, pentafluoroethylene chloride, octafluoro-cyclobutane, hexafluoropropylene, chlorine, boron trichloride, phosgene, hydrogen fluoride, hydrogen bromide, sulfur dioxide, sulfuric acid fluoride, nitrogen dioxide, hydraulic petroleum gases, propane, cyclopropane, propylene, n-butane, iso-butane, 1-butene, iso-butylene, cis- 2-butene, trans- 2-butene, R142b, R 143a, R152a, ethylene chloride, dimethyl ether, ammonia, ethylamine, monomethylamine, dimethylamine, trimethylamine, methylmercaptan, hydrogen sulfide, methyl chloride, methyl bromide, arsine, 1 , 3-butadiene, vinyl chloride, ethylene oxide, vinyl methyl ether, ethylene bromide.
14. High pressure liquefied gases (H igh P ressu re L iquef iedGases): critical temperature greater than or equal to - 10 ℃ and less than or equal to 70 ℃ gas. Distinguish between non-combustible, non-toxic and non-combustible toxic gases; combustible, non-toxic and spontaneous combustion toxic gases; and combustible gases that are easily decomposed or polymerized. Such gases are liquid when filled, but their vapor pressure rises with the increase of temperature during storage, transportation and use under the permitted working temperature, and evaporates into gas when it exceeds the critical temperature. The gases included are nitrous oxide, carbon dioxide, trifluoromethane, trifluorochloromethane, trifluorobromomethane, hexafluoroethane, sulfur hexafluoride, xenon, hydrogen chloride, ethane, ethylene, 1, 1- difluoroethene, silanes, phosgene, fluoroethene, and ethylborane.