What are the photoelectric devices?

Question 1: What types of optoelectronic devices mainly include? There should be two kinds visible in the market (I think so).

1. Optical fiber communication devices include optical active devices (such as lasers, optical transceiver modules, etc. ) and optical passive devices (such as optical fiber couplers, optical fiber switches, optical wave splitters, etc. ).

2. Photoelectric lighting equipment, such as LED lamps, or other illuminating lamps, or illuminating decorative lamps.

Finally, it can be understood that the product needs electricity to light, or light to electricity, or other photoelectric related functions, and belongs to photoelectric devices.

Question 2: What do photoelectric devices mean? The design principle of optoelectronic devices is based on the change of guided light propagation mode by external field, which is the key and core component of optoelectronic technology. The technology used in the display of many LEDs on the main road or some brands in some shops comes from photoelectric devices. If you are interested, you can Baidu yourself for "Brother Guidance". The more you know about photoelectric devices, the easier it will be to learn.

Question 3: The main contents of optoelectronic devices Optoelectronic devices (2nd edition) focus on the basic theory and knowledge of optoelectronic detection and imaging devices. The main contents include: semiconductor photodetector, photomultiplier tube, low light level image intensifier, vacuum camera tube, CCD and CMOS imaging devices, refrigerated and uncooled infrared imaging devices, ultraviolet imaging devices and X-ray imaging devices. Photoelectric Devices (2nd Edition) is suitable for undergraduates majoring in electronic science and technology, photoelectric technology, physical electronics, etc. It can also be read by graduate students in similar majors, and can also be used as a reference for technicians engaged in photoelectric device research and photoelectric technology. Title: Optoelectronic Devices Author: Wang Guihua Press: National Defense Industry Press Publication Date: 065438+20091October ISBN: 978718060355 Format: 16 Price: 32.00 Yuan Optoelectronic devices mainly talk about photoelectric detection and imaging devices. The main contents include: semiconductor photodetector, photomultiplier tube, low light level image intensifier, vacuum camera tube, CCD and CMOS imaging devices, refrigerated and uncooled infrared imaging devices, ultraviolet imaging devices and X-ray imaging devices. Photoelectric devices are suitable for undergraduates majoring in electronic science and technology, photoelectric technology, physical electronics and so on. It can also be read by graduate students in similar majors, and can also be used as a reference for technicians engaged in photoelectric device research and photoelectric technology. 1 chapter photoconductive detector chapter 2 junction photodetector chapter 3 photocathode and photomultiplier tube chapter 4 low-light image intensifier chapter 5 camera tube chapter 6 CCD and s imaging device chapter 7 refrigeration infrared imaging device chapter 8 microbolometer infrared imaging device chapter 9 pyroelectric detector and imaging device chapter 10 ultraviolet detection and imaging device chapter 1 1.

Question 4: Photoelectric devices introduce various functional devices made by photoelectric conversion effect. The design principle of photoelectric devices is based on the change of guided light propagation mode by external field, which is also different from photoelectric devices used by early people. Optoelectronic device is the key and core component of optoelectronic technology, the frontier research field of modern optoelectronic technology and microelectronics technology, and an important part of information technology.

Question 5: What is the principle of photoelectric devices? What would use this? The design principle of optoelectronic devices is based on the change of guided light propagation mode by external field, which is the key and core component of optoelectronic technology. The technology used in the display of many LEDs on the main road or some brands in some shops comes from photoelectric devices. If you are interested, you can have a look at "Brother Pointing" yourself. The more you know about photoelectric devices, the easier it will be to learn.

Question 6: Optoelectronic optoelectronic devices mainly include light sources, radiation detectors, control and processing elements, optical fibers and display and imaging devices as information carriers. It is difficult to quickly control the heat radiation process of the light source as the information carrier, but the light beam emitted by it can be modulated, filtered or otherwise processed, so that the light beam carries information during its propagation. Luminous light sources other than thermal radiation can naturally carry information in the propagation process, but more importantly, they carry information in the emission process. Semiconductor PN junction light emitting diodes that can be driven at low voltage are usually used, especially high brightness semiconductor light emitting diodes and semiconductor lasers. They have the advantages of fast response, easy modulation, small volume and light intensity. Laser has good monochromaticity, coherence, directivity and high intensity, which is beneficial to optical communication and other applications. That is, photoelectric and optical-optical converters can be divided into photoelectric effect and thermal effect. ① photoelectric effect: it can be divided into external photoelectric effect and internal photoelectric effect. The external photoelectric effect is the photoelectron emission effect, and the devices using this effect are all vacuum electronic devices. For example, a photomultiplier tube, whose photocathode can convert an optical signal into a one-dimensional (time) electrical signal, and after repeated secondary emission, the signal is enhanced by the electron multiplier electrode and then output from the anode. The sensitivity of this device is so high that it can even be used to form a photon counter to detect a single photon. A two-dimensional (spatial) photon counter has been developed to detect extremely weak optical information. Another example is the image intensifier tube, which converts X-rays or ultraviolet rays into light sensitive to photocathode, or uses photocathode sensitive to infrared rays to make the light image on the imaging photocathode emit corresponding photoelectrons. After accelerated imaging, these photoelectrons bombard the fluorescent screen, output visible light and emit brighter light images. It is an optical-optical conversion device. This is the working principle of X-ray or ultraviolet image intensifier and infrared image converter. This device can expand the sensitive range of human eyes to electromagnetic wave bands. Devices using internal photoelectric effect are all semiconductor devices. Its main principles are photoconductivity and photogenerated electromotive force. The photoconductive detector is made of a single semiconductor or diode, which is called a semiconductor photodiode. When exposed to light, its resistance will change. Wherein the photodiode usually works under reverse bias condition. If the reverse bias voltage is high enough, the carrier current passing through the PN junction directly reflects the light energy received by the detector in unit time. Photodiodes can also work without bias. At this time, the radiation will produce electromotive force at both ends of the PN junction, and its short-circuit current is proportional to the received radiation power. The detector of infrared thermal imaging system is usually photoconductive. Commonly used are mercury cadmium telluride, lead tin telluride and germanium-doped mercury detectors. They all have to work at low temperature to reduce the thermal noise of the detector. (2) Thermal effect: A detector using thermal effect is generally called a thermal detector, which mainly uses the effects of resistance change, thermoelectric electromotive force generation and spontaneous polarization change caused by the temperature rise of an object after radiation irradiation to measure radiation power. These detectors are all used in infrared band, with the advantage that their responsivity is independent of wavelength, and they can also detect long-wave radiation at room temperature, but the response time is much longer than that of photoelectric detectors. The main characteristics of light are intensity, spectrum, polarization, luminous time and coherence. When a light beam propagates, it has the characteristics of directionality, divergence or convergence. The function of the control element is to change these characteristics of light. In order to deflect, focus and collimate light beams, mirrors, lenses, prisms and beam splitters are often used. The reflector is usually made of metal film or dielectric film with high reflection coefficient and selectivity. The reflector can be made of total reflection, which is used for image inversion, image conversion, beam splitting and total reflection. In order to change other characteristics of light beam, commonly used components include filters, prisms, gratings, polarizers, choppers, electro-optic crystals controlled by electric fields and liquid crystals. Electro-optical switch can not only change the intensity and polarization of light, but also control the duration of light passing, and it is a widely used device. Its structure is that a birefringent crystal is placed between two orthogonal polarizers, and an electric field is applied to the crystal, so that the polarization direction of light passing through the crystal will rotate, and the rotation angle depends on the intensity of the electric field. Therefore, the intensity of transmitted light can be changed by adjusting the intensity of electric field; Changing the action time of electric field can modulate the duration of light. Using the diffraction effect of sound wave on light, the frequency, intensity and propagation direction of light beam can be controlled. Under the condition of near Bragg diffraction, the interaction of acousto-optic makes the beam deflect. When the audio changes, the deflection angle changes proportionally. When the diffraction effect is small, the intensity of diffracted light is directly proportional to the intensity of sound wave. Use information to make adjustments ... >>

Question 7: Basic contents of optical devices Devices that convert electrical signals into optical signals are called light sources, which mainly include semiconductor light emitting diodes (led) and laser diodes (LD). Devices that convert optical signals into electrical signals are called photodetectors, which mainly include photodiode (PIN) and avalanche photodiode (APD). In recent years, fiber amplifier has become a new star of optical active devices. At present, erbium-doped fiber amplifier (EDFA) is widely used, while Raman optical amplifier is being studied, which has great application prospects. Optical passive devices are photoelectric devices that do not need external energy to drive. Comprises an optical fiber connector, an optical fiber coupler, a wavelength division multiplexer, an optical attenuator and an optical isolator, and is the joint of an optical transmission system. Optical connectors are the most widely used and the largest number of optical passive devices, followed by couplers and wavelength division multiplexers, and other devices are less used. With the development of optical communication technology, the demand for dense wavelength division multiplexer and large port number matrix optical switch will gradually increase. The optical device industry is in the middle of the optical communication industry chain, providing devices, modules, subsystems and other products for downstream optical system equipment manufacturers. There are many kinds of products in the optical device industry. According to the functional division, the optical device industry is divided into passive devices and active devices, and the proportion of active devices in the optical device industry is as high as 78%. Powerful manufacturers produce both active devices and passive devices, mainly active and high-end products, and many enterprises specialize in a certain product field.

Question 8: What are the common materials for optical components? The materials of commonly used parts mainly include:

Low carbon steel: washers, chains, gears, cams, etc.

Medium carbon steel: shafts, keys, bolts, gears, connecting rods, etc.

High carbon steel: rollers, springs, elastic chucks, etc.

Cast iron: machine tool bed, engine box, shell, etc.

Aluminum and aluminum alloys: electrical components, aerospace parts, radiators, etc.

Copper and copper alloys: electrical components, radiators, paper-making instruments, daily necessities;

Bearing alloy: sliding bearing, etc.

Question 9: What is a semiconductor heterojunction? What is the function of heterostructure in semiconductor optoelectronic devices? Semiconductor heterostructures are usually composed of more than two layers of different materials, and each layer of materials has a different energy band gap. These materials can be compounds such as GaAs or semiconductor alloys such as silicon germanium. According to the arrangement of conduction band and valence band of two materials in heterojunction, heterojunction can be divided into two types: I-type heterojunction and II-type heterojunction, and their energy band structures.

Heterojunction map

The energy band structure of type I heterojunction is nested. The conduction band bottom and valence band top of narrowband materials are located in the forbidden band of broadband materials. Δ EC and Δ EV have opposite signs. GaAlAs/GaAs and InGaAsP/InP belong to this category. In type ⅱ heterojunction, Δ EC and Δ EV have the same sign. Specifically, it can be divided into two types: one is staggered arrangement, the bottom of conduction band of narrow-band materials is located in the forbidden band of broadband materials, and the top of valence band of narrow-band materials is located in the valence band of broadband materials. As shown in figure 1(c), the conduction band bottom and valence band top of another narrowband material are both located in the valence band of broadband material.

The basic characteristics of type ⅱ heterojunction are the separation of electron and hole space near the interface and the localization in the self-consistent quantum well. Due to the overlap of wave functions near the interface, the number of optical matrix elements is reduced, thus prolonging the radiation lifetime and reducing the exciton binding energy. Because the light intensity and applied electric field will strongly affect the characteristics of type II heterojunction, compared with type I heterojunction, type II heterojunction shows unusual carrier dynamics and recombination characteristics, thus affecting its electrical, optical and photoelectric characteristics and device parameters. ic.big-bit/news/list-75

Question 10: Business scope: What are the photoelectric devices?