IGBT semiconductor is a new type of semiconductor device, which is a compound full-control voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR.
As one of the important high-power mainstream devices in the field of power electronics, IGBT has been widely used in household appliances, transportation, power engineering, renewable energy and smart grid.
In industrial applications, such as traffic control, power conversion, industrial motors, uninterrupted power supply, wind power generation and solar energy equipment, as well as frequency converters for automatic control. In consumer electronics, IGBT is used in household appliances, cameras and mobile phones.
operating characteristic
The static characteristics of IGBT mainly include volt-ampere characteristics, transfer characteristics and switching characteristics.
The volt-ampere characteristic of IGBT refers to the relationship curve between leakage current and gate voltage when the gate-source voltage Ugs is taken as the parameter variable. The output leakage current ratio is controlled by the gate-source voltage Ugs, and the higher the Ugs, the greater the Id. Its output characteristics are similar to GTR, and it can also be divided into three parts: saturation region 1, amplification region 2 and breakdown characteristics.
In the turn-on process of IGBT, IGBT works as MOSFET most of the time, but in the later period when the drain-source voltage Uds drops, the PNP transistor changes from the amplification region to saturation, which adds another delay time. Td(on) is the turn-on delay time and tri is the current rise time. In practical application, the conduction time ton of leakage current is the sum of td(on)tri, and the falling time of drain-source voltage is composed of tfe 1 and tfe2.